Silicon carbide and related materials 2013 / edited by Hajime Okumura [and eight others].

"The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface.

Includes bibliographical references and indexes.

Online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014).

The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T.

Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth.

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method.

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity.

Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle.

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate.

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