MARC details
| 000 -LEADER |
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| fixed length control field |
08054cam a2200889Ii 4500 |
| 001 - CONTROL NUMBER |
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| control field |
ocn872573051 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
OCoLC |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20220711221904.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION |
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m o d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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cr ||||||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
140313t20142014sz a ob 101 0 eng d |
| 040 ## - CATALOGING SOURCE |
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| Original cataloging agency |
CUS |
| Language of cataloging |
eng |
| Description conventions |
rda |
| -- |
pn |
| Transcribing agency |
CUS |
| Modifying agency |
SEA |
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E7B |
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N$T |
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OCLCO |
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OCLCQ |
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OCLCF |
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YDXCP |
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EBLCP |
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DEBSZ |
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OCLCO |
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OCL |
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AGLDB |
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OCLCQ |
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MERUC |
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ICG |
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ZCU |
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OCL |
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VTS |
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OCLCQ |
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STF |
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DKC |
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OCLCQ |
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M8D |
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OCLCQ |
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AJS |
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OCLCO |
| 019 ## - |
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| -- |
878138273 |
| -- |
899159009 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9783038263913 |
| Qualifying information |
(electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
3038263915 |
| Qualifying information |
(electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| Cancelled/invalid ISBN |
9783038350101 |
| 029 1# - (OCLC) |
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| OCLC library identifier |
DEBBG |
| System control number |
BV043780254 |
| 029 1# - (OCLC) |
|---|
| OCLC library identifier |
DEBSZ |
| System control number |
431893659 |
| 029 1# - (OCLC) |
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| OCLC library identifier |
DEBSZ |
| System control number |
472813528 |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(OCoLC)872573051 |
| Canceled/invalid control number |
(OCoLC)878138273 |
| -- |
(OCoLC)899159009 |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
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| Classification number |
TK7871.15.S56 |
| Item number |
.S555 2014eb |
| 072 #7 - SUBJECT CATEGORY CODE |
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| Subject category code |
TEC |
| Subject category code subdivision |
009070 |
| Source |
bisacsh |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
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| Classification number |
621.38152 |
| Edition number |
23 |
| 049 ## - LOCAL HOLDINGS (OCLC) |
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| Holding library |
MAIN |
| 111 2# - MAIN ENTRY--MEETING NAME |
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| Meeting name or jurisdiction name as entry element |
International Conference on Silicon Carbide and Related Materials |
| Number of part/section/meeting |
(15th : |
| Date of meeting |
2013 : |
| Location of meeting |
Miyazaki-shi, Japan) |
| 9 (RLIN) |
995150 |
| 245 10 - TITLE STATEMENT |
|---|
| Title |
Silicon carbide and related materials 2013 / |
| Statement of responsibility, etc |
edited by Hajime Okumura [and eight others]. |
| 264 #1 - |
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| -- |
Switzerland : |
| -- |
Trans Tech Publications, |
| -- |
2014. |
| 264 #4 - |
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| -- |
©2014 |
| 300 ## - PHYSICAL DESCRIPTION |
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| Extent |
1 online resource (1205 pages) : |
| Other physical details |
illustrations (some color) |
| 336 ## - |
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| -- |
text |
| -- |
txt |
| -- |
rdacontent |
| 337 ## - |
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| -- |
computer |
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c |
| -- |
rdamedia |
| 338 ## - |
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| -- |
online resource |
| -- |
cr |
| -- |
rdacarrier |
| 490 1# - SERIES STATEMENT |
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| Series statement |
Materials science forum, |
| International Standard Serial Number |
0255-5476 ; |
| Volume number/sequential designation |
vols. 778-780 |
| 500 ## - GENERAL NOTE |
|---|
| General note |
"The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
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| Bibliography, etc |
Includes bibliographical references and indexes. |
| 588 0# - |
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| -- |
Online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014). |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc |
The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. |
| 505 0# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth. |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method. |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity. |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle. |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate. |
| 590 ## - LOCAL NOTE (RLIN) |
|---|
| Local note |
eBooks on EBSCOhost |
| Provenance (VM) [OBSOLETE] |
EBSCO eBook Subscription Academic Collection - Worldwide |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Silicon carbide |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
971853 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Silicon carbide |
| General subdivision |
Electric properties |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
971854 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Silicon-carbide thin films |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
971855 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nitrides |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
970650 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Graphene |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
294366 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Crystal growth |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
995151 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Wide gap semiconductors |
| General subdivision |
Materials |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
995152 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Wide gap semiconductors |
| General subdivision |
Materials |
| -- |
Technological innovations |
| Form subdivision |
Congresses. |
| 9 (RLIN) |
995153 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Couches minces de carbure de silicium |
| Form subdivision |
Congrès. |
| 9 (RLIN) |
971856 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nitrures |
| Form subdivision |
Congrès. |
| 9 (RLIN) |
970651 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Graphène |
| Form subdivision |
Congrès. |
| 9 (RLIN) |
995154 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Cristaux |
| General subdivision |
Croissance |
| Form subdivision |
Congrès. |
| 9 (RLIN) |
995155 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semi-conducteurs à large bande interdite |
| General subdivision |
Matériaux |
| Form subdivision |
Congrès. |
| 9 (RLIN) |
995156 |
| 650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semi-conducteurs à large bande interdite |
| General subdivision |
Matériaux |
| -- |
Innovations |
| Form subdivision |
Congrès. |
| 9 (RLIN) |
995157 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
TECHNOLOGY & ENGINEERING |
| General subdivision |
Mechanical. |
| Source of heading or term |
bisacsh |
| 9 (RLIN) |
91801 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Crystal growth. |
| Source of heading or term |
fast |
| -- |
(OCoLC)fst00884619 |
| 9 (RLIN) |
301392 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Graphene. |
| Source of heading or term |
fast |
| -- |
(OCoLC)fst01746494 |
| 9 (RLIN) |
283194 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Nitrides. |
| Source of heading or term |
fast |
| -- |
(OCoLC)fst01037993 |
| 9 (RLIN) |
275644 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Silicon carbide. |
| Source of heading or term |
fast |
| -- |
(OCoLC)fst01118657 |
| 9 (RLIN) |
151805 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Silicon carbide |
| General subdivision |
Electric properties. |
| Source of heading or term |
fast |
| -- |
(OCoLC)fst01118659 |
| 9 (RLIN) |
183554 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Silicon-carbide thin films. |
| Source of heading or term |
fast |
| -- |
(OCoLC)fst01118697 |
| 9 (RLIN) |
971857 |
| 655 #0 - INDEX TERM--GENRE/FORM |
|---|
| Genre/form data or focus term |
Electronic books. |
| 655 #4 - INDEX TERM--GENRE/FORM |
|---|
| Genre/form data or focus term |
Electronic books. |
| 655 #7 - INDEX TERM--GENRE/FORM |
|---|
| Genre/form data or focus term |
Conference papers and proceedings. |
| Source of term |
fast |
| -- |
(OCoLC)fst01423772 |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Okumura, Hajime, |
| Relator term |
editor. |
| 9 (RLIN) |
608606 |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
|---|
| Display text |
Print version: |
| Main entry heading |
International Conference on Silicon Carbide and Related Materials (15th : 2013 : Miyazaki-shi, Japan). |
| Title |
Silicon carbide and related materials : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. |
| Place, publisher, and date of publication |
Zurich, Switzerland : TTP, ©2014 |
| Physical description |
1230 pages |
| Series data for related item |
Materials science forum ; Volume 778-780 |
| International Standard Serial Number |
1662-9752 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Materials science forum ; |
| Volume number/sequential designation |
v. 778-780. |
| 9 (RLIN) |
857099 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Uniform Resource Identifier |
<a href="https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=711956">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=711956</a> |
| 938 ## - |
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EBL - Ebook Library |
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EBLB |
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EBL1910707 |
| 938 ## - |
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ebrary |
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EBRY |
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ebr10846253 |
| 938 ## - |
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EBSCOhost |
| -- |
EBSC |
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711956 |
| 938 ## - |
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YBP Library Services |
| -- |
YANK |
| -- |
11697649 |
| 994 ## - |
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92 |
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INOPJ |
