Silicon carbide and related materials 2014 : selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France / edited by Didier Chaussende and Gabriel Ferro.
Material type: TextSeries: Materials science forum ; v. 821-823.Publisher: Switzerland : Trans Tech Publications, 2015Copyright date: ©2015Description: 1 online resource (1078 pages) : illustrations (some color)Content type:- text
- computer
- online resource
- 9783038269434
- 3038269433
- Silicon carbide -- Congresses
- Silicon carbide -- Electric properties -- Congresses
- Silicon-carbide thin films -- Congresses
- Nitrides -- Congresses
- Graphene -- Congresses
- Crystal growth -- Congresses
- Wide gap semiconductors -- Materials -- Congresses
- Wide gap semiconductors -- Materials -- Technological innovations -- Congresses
- Couches minces de carbure de silicium -- Congrès
- Nitrures -- Congrès
- Graphène -- Congrès
- Cristaux -- Croissance -- Congrès
- Semi-conducteurs à large bande interdite -- Matériaux -- Congrès
- Semi-conducteurs à large bande interdite -- Matériaux -- Innovations -- Congrès
- TECHNOLOGY & ENGINEERING -- Mechanical
- TECHNOLOGY & ENGINEERING / Engineering (General)
- TECHNOLOGY & ENGINEERING / Reference
- Silicon-carbide thin films
- Nitrides
- Graphene
- Crystal growth
- Silicon carbide
- Silicon carbide -- Electric properties
- 620.1/93 620.11 620.193
- TK7871.15.S56 S553 2013
Item type | Home library | Collection | Call number | Materials specified | Status | Date due | Barcode | |
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Electronic-Books | OPJGU Sonepat- Campus | E-Books EBSCO | Available |
This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ... -- Preface.
Description based on online resource; title from HTML table of contents page (Scientific.Net viewed July 15, 2015).
Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effect Transistors; IV.3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science.
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