Silicon carbide and related materials 2014 : selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France /
Silicon carbide and related materials 2014 : selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France /
edited by Didier Chaussende and Gabriel Ferro.
- 1 online resource (1078 pages) : illustrations (some color).
- Materials science forum, volumes 821-823 0255-5476 ; .
- Materials science forum ; v. 821-823. .
This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ... -- Preface.
Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effect Transistors; IV.3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science.
9783038269434 (electronic bk.) 3038269433 (electronic bk.) print
Silicon carbide--Congresses.
Silicon carbide--Electric properties--Congresses.
Silicon-carbide thin films--Congresses.
Nitrides--Congresses.
Graphene--Congresses.
Crystal growth--Congresses.
Wide gap semiconductors--Materials--Congresses.
Wide gap semiconductors--Materials--Technological innovations--Congresses.
Couches minces de carbure de silicium--Congrès.
Nitrures--Congrès.
Graphène--Congrès.
Cristaux--Croissance--Congrès.
Semi-conducteurs à large bande interdite--Matériaux--Congrès.
Semi-conducteurs à large bande interdite--Matériaux--Innovations--Congrès.
TECHNOLOGY & ENGINEERING--Mechanical.
TECHNOLOGY & ENGINEERING / Engineering (General)
TECHNOLOGY & ENGINEERING / Reference
Silicon-carbide thin films.
Nitrides.
Graphene.
Crystal growth.
Silicon carbide.
Silicon carbide--Electric properties.
Electronic books.
Electronic books.
Conference papers and proceedings.
TK7871.15.S56 S553 2013
620.1/93 620.11 620.193
This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ... -- Preface.
Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effect Transistors; IV.3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science.
9783038269434 (electronic bk.) 3038269433 (electronic bk.) print
Silicon carbide--Congresses.
Silicon carbide--Electric properties--Congresses.
Silicon-carbide thin films--Congresses.
Nitrides--Congresses.
Graphene--Congresses.
Crystal growth--Congresses.
Wide gap semiconductors--Materials--Congresses.
Wide gap semiconductors--Materials--Technological innovations--Congresses.
Couches minces de carbure de silicium--Congrès.
Nitrures--Congrès.
Graphène--Congrès.
Cristaux--Croissance--Congrès.
Semi-conducteurs à large bande interdite--Matériaux--Congrès.
Semi-conducteurs à large bande interdite--Matériaux--Innovations--Congrès.
TECHNOLOGY & ENGINEERING--Mechanical.
TECHNOLOGY & ENGINEERING / Engineering (General)
TECHNOLOGY & ENGINEERING / Reference
Silicon-carbide thin films.
Nitrides.
Graphene.
Crystal growth.
Silicon carbide.
Silicon carbide--Electric properties.
Electronic books.
Electronic books.
Conference papers and proceedings.
TK7871.15.S56 S553 2013
620.1/93 620.11 620.193