SiC based Miniaturized Devices
Saddow, Stephen Edward
SiC based Miniaturized Devices - Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2020 - 1 electronic resource (170 p.)
Open Access
MEMS devices are found in many of today's electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.
Creative Commons
English
books978-3-03936-011-6 9783039360109 9783039360116
10.3390/books978-3-03936-011-6 doi
History of engineering & technology
high-power impulse magnetron sputtering (HiPIMS) silicon carbide aluminum nitride thin film Rutherford backscattering spectrometry (RBS) grazing incidence X-ray diffraction (GIXRD) Raman spectroscopy 6H-SiC indentation deformation material removal mechanisms critical load 4H-SiC critical depth of cut Berkovich indenter cleavage strength nanoscratching power electronics high-temperature converters MEMS devices SiC power electronic devices neural interface neural probe neural implant microelectrode array MEA SiC 3C-SiC doped SiC n-type p-type amorphous SiC epitaxial growth electrochemical characterization MESFET simulation PAE bulk micromachining electrochemical etching circular membrane bulge test vibrometry mechanical properties Young's modulus residual stress FEM semiconductor radiation detector microstrip detector power module negative gate-source voltage spike 4H-SiC, epitaxial layer Schottky barrier radiation detector point defects deep level transient spectroscopy (DLTS) thermally stimulated current spectroscopy (TSC) electron beam induced current spectroscopy (EBIC) pulse height spectroscopy (PHS) n/a
SiC based Miniaturized Devices - Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2020 - 1 electronic resource (170 p.)
Open Access
MEMS devices are found in many of today's electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.
Creative Commons
English
books978-3-03936-011-6 9783039360109 9783039360116
10.3390/books978-3-03936-011-6 doi
History of engineering & technology
high-power impulse magnetron sputtering (HiPIMS) silicon carbide aluminum nitride thin film Rutherford backscattering spectrometry (RBS) grazing incidence X-ray diffraction (GIXRD) Raman spectroscopy 6H-SiC indentation deformation material removal mechanisms critical load 4H-SiC critical depth of cut Berkovich indenter cleavage strength nanoscratching power electronics high-temperature converters MEMS devices SiC power electronic devices neural interface neural probe neural implant microelectrode array MEA SiC 3C-SiC doped SiC n-type p-type amorphous SiC epitaxial growth electrochemical characterization MESFET simulation PAE bulk micromachining electrochemical etching circular membrane bulge test vibrometry mechanical properties Young's modulus residual stress FEM semiconductor radiation detector microstrip detector power module negative gate-source voltage spike 4H-SiC, epitaxial layer Schottky barrier radiation detector point defects deep level transient spectroscopy (DLTS) thermally stimulated current spectroscopy (TSC) electron beam induced current spectroscopy (EBIC) pulse height spectroscopy (PHS) n/a