| 000 | 03720naaaa2200925uu 4500 | ||
|---|---|---|---|
| 001 | https://directory.doabooks.org/handle/20.500.12854/68989 | ||
| 005 | 20220714192202.0 | ||
| 020 | _abooks978-3-03943-041-3 | ||
| 020 | _a9783039430406 | ||
| 020 | _a9783039430413 | ||
| 024 | 7 |
_a10.3390/books978-3-03943-041-3 _cdoi |
|
| 041 | 0 | _aEnglish | |
| 042 | _adc | ||
| 072 | 7 |
_aTBX _2bicssc |
|
| 100 | 1 |
_aDharmadasa, I. M. _4edt _91616156 |
|
| 700 | 1 |
_aDharmadasa, I. M. _4oth _91616156 |
|
| 245 | 1 | 0 | _aAdvanced Thin Film Materials for Photovoltaic Applications |
| 260 |
_aBasel, Switzerland _bMDPI - Multidisciplinary Digital Publishing Institute _c2020 |
||
| 300 | _a1 electronic resource (148 p.) | ||
| 506 | 0 |
_aOpen Access _2star _fUnrestricted online access |
|
| 520 | _aThe direct conversion of sunlight into electricity (photovoltaic or PV for short) is evolving rapidly, and is a technology becoming a mainstream clean energy production method. However, to compete with conventional energy production methods using fossil fuels, the conversion efficiency needs to be increased, and the manufacturing cost should be reduced further. Both of these require the improvement of solar energy materials, and the device architectures used for the conversion of light into electrical energy. This Special Issue presents the latest developments in some solar energy materials like Si, CdTe, CIGS, SnS and Perovskites), and the device structures suitable for next generation solar cells. In particular, the progress in graded bandgap multi-layer solar cells are presented in this Special Issue. | ||
| 540 |
_aCreative Commons _fhttps://creativecommons.org/licenses/by/4.0/ _2cc _4https://creativecommons.org/licenses/by/4.0/ |
||
| 546 | _aEnglish | ||
| 650 | 7 |
_aHistory of engineering & technology _2bicssc _91129967 |
|
| 653 | _aelectroplating | ||
| 653 | _asemiconductors | ||
| 653 | _alarge-area electronics | ||
| 653 | _acharacterisation | ||
| 653 | _asolar cells | ||
| 653 | _aperovskite solar cell | ||
| 653 | _ahole blocking layer | ||
| 653 | _asolution spin-coating | ||
| 653 | _aTiO2/SnO2 layer | ||
| 653 | _aanti-reflection coating | ||
| 653 | _apotential-induced degradation | ||
| 653 | _asolar cell | ||
| 653 | _aplasma enhanced chemical vapor deposition | ||
| 653 | _aorganic solar cells | ||
| 653 | _aperovskite solar cells | ||
| 653 | _aencapsulation | ||
| 653 | _astability | ||
| 653 | _aCu(In,Ga)Se2 | ||
| 653 | _amini-module | ||
| 653 | _anumerical simulation | ||
| 653 | _aP1 shunt | ||
| 653 | _aspace charge region (SCR) | ||
| 653 | _aTCAD | ||
| 653 | _atransistor effect | ||
| 653 | _aelectrodeposition | ||
| 653 | _aCdTe film | ||
| 653 | _atwo-electrode configuration | ||
| 653 | _athin films | ||
| 653 | _aelectroplating temperature | ||
| 653 | _aphotovoltaic | ||
| 653 | _aCdTe | ||
| 653 | _aCdS | ||
| 653 | _aluminescence | ||
| 653 | _aspectroscopy | ||
| 653 | _aCdSe | ||
| 653 | _aCdTe1−xSex | ||
| 653 | _aphotovoltaics | ||
| 653 | _areview | ||
| 653 | _atin monosulfide | ||
| 653 | _atin disulfide | ||
| 653 | _achemical solution process | ||
| 653 | _aabsorber | ||
| 653 | _abuffer | ||
| 653 | _arenewable energy | ||
| 653 | _aethlammonium | ||
| 653 | _aformamidinium | ||
| 653 | _amicrostructure | ||
| 653 | _aperovskite | ||
| 653 | _aSnS/SnS2 | ||
| 653 | _aCdS/CdTe | ||
| 653 | _aCIGS | ||
| 653 | _asilicon | ||
| 653 | _aelectroplating of semiconductors | ||
| 856 | 4 | 0 |
_awww.oapen.org _uhttps://mdpi.com/books/pdfview/book/2757 _70 _zDOAB: download the publication |
| 856 | 4 | 0 |
_awww.oapen.org _uhttps://directory.doabooks.org/handle/20.500.12854/68989 _70 _zDOAB: description of the publication |
| 999 |
_c3015189 _d3015189 |
||