Vertical GaN and SiC power devices / Kazuhiro Mochizuki.

Print version record.

Includes bibliographical references and index.

1. Vertical versus lateral power semiconductor devices -- 2. Physical properties of GaN and SiC -- 3. p-n junctions -- 4. Effects of photon recycling -- 5. Bulk crystal growth -- 6. Epitaxial growth -- 7. Fabrication processes -- 8. Metal-semiconductor contacts and unipolar power diodes -- 9. Metal-insulator-semiconductor capacitors and unipolar power-switching devices -- 10. Bipolar power diodes and power-switching devices -- 11. Edge terminations -- 12. Reliability of vertical GaN and SiC power devices.

"This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource."-- Provided by publisher

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