Nano devices and sensors / edited by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung.

Selection of papers from 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan.

Includes bibliographical references.

"The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies"--Provided by publisher.

Print version record.

In English.

Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-æW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-æm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors.

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