Physical properties of the low-dimensional A³3B⁶ and A³B³C₂⁶ compounds / Alexander M. Panich and Rauf M. Sardarly.

Includes bibliographical references and index.

Print version record.

LIBRARY OF CONGRESS CATALOGING-IN-PUBLICATION DATA; CONTENTS; PREFACE; ACKNOWLEDGMENTS; CRYSTAL STRUCTURE ATAMBIENT CONDITIONS; REFERENCES; TRANSPORT PROPERTIES UNDERAMBIENT CONDITIONS; REFERENCES; EXPERIMENTAL STUDIES OF THEELECTRONIC STRUCTURE; 3.1. PHOTOEMISSION MEASUREMENTS; 3.2. NUCLEAR MAGNETIC RESONANCE MEASUREMENTS; 3.2.1. NMR in Thallium Compounds; 3.2.2. Indirect Nuclear Exchange in Chain-Type Compounds; 3.2.3. Indirect Nuclear Exchange in Layered Compounds; 3.2.4. Wave Function Overlap and Electronic Structure; REFERENCES; BAND STRUCTURE CALCULATIONS.

4.1. BAND STRUCTURE CALCULATIONS OF THECHAIN-TYPE COMPOUNDS4.2. BAND STRUCTURE CALCULATIONS OF THELAYER-TYPE COMPOUNDS; REFERENCES; TRANSPORT PROPERTIES AND SEMICONDUCTORMETALPHASE TRANSITIONS UNDER HIGHPRESSURE; 5.1. TETRAGONAL (CHAIN-TYPE) CRYSTALS UNDER HIGH PRESSURE; 5.2. LAYERED CRYSTALS UNDER HIGH PRESSURE; REFERENCES; PHASE TRANSITIONS IN CHAIN-TYPE CRYSTALSUNDER AMBIENT PRESSURE; 6.1. TlSe AND TlS COMPOUNDS WITH THE CHAIN-TYPE STRUCTURE; 6.2. CHAIN-TYPE TlInSe2 CRYSTAL; 6.3. CHAIN-TYPE TlInTe2 CRYSTAL; 6.4. PHASE TRANSITIONS AND INCOMMENSURABILITY IN TlGaTe2.

6.5. PEIERLS DISTORTION AND PHASE TRANSITION IN TlTeREFERENCES; FERROELECTRIC PHASE TRANSITIONS ANDINCOMMENSURATE STATES IN LAYERED CRYSTALS; 7.1. LAYERED TlS CRYSTAL; 7.2. TERNARY LAYERED COMPOUNDS TlInS2, TlGaSe2, AND TlGaS2; 7.2.1. Phase Transitions and Incommensurability in TlInS2; 7.2.2. Optical Second Harmonic Generation in TlInS2; 7.2.3. Phase Transitions and Incommensurability in TlGaSe2; 7.2.4. Polymorphism of TlGaSe2 and TlInS2; 7.2.5. Search of Phase Transitions in TlGaS2; 7.2.6. Phase Transitions in Mixed Layered Crystals.

7.3. ELECTRONIC ORIGIN OF PHASE TRANSITIONSIN THE LAYERED CRYSTALSREFERENCES; RELAXOR BEHAVIOR AND NANODOMAINSTRUCTURE OF DOPED AND IRRADIATEDTLINS2 CRYSTALS; 8.1. INTRODUCTION; 8.2. RELAXOR PROPERTIES OF DOPED TlInS2 CRYSTALS; 8.3. RELAXOR PROPERTIES AND ELECTRICAL CONDUCTIVITY OF-IRRADIATED TlInS2 CRYSTALS; REFERENCES; LATTICE DYNAMICS IN A3B6AND A3B3C62COMPOUNDS WITH TLSE-TYPE STRUCTURE; 9.1. INELASTIC NEUTRON SCATTERING IN TlSe; 9.1.1. Inelastic Coherent Neutron Scattering in TlSe; 9.1.2. Density of Phonon States in TlSe.

9.2. TWO-PHONON ABSORPTION AND DISPERSION SPECTRA INCRYSTALS WITH TlSe-TYPE STRUCTURE9.3. INVESTIGATION OF DENSITY FUNCTION OF VIBRATION STATESIN TlSe AND TlS CRYSTALS BY MEANS OF RAMAN SPECTROSCOPY; 9.3.1. Density Function of Phonon States within Molecular Phonons; 9.3.2. Spectral Function of Completely Symmetric Two-Phonon States and Function of Density of Single-Phonon States in TlSe and TlS; 9.3.3. Features of the DOS Function in the Spectrum of A1g-Vibrations inSolid Solutions TlSxSe1-x.; REFERENCES; VIBRATION SPECTRA OF MIXED CRYSTALS (SOLIDSOLUTIONS) OF A3B6 AND A3B3C62 COMPOUNDS.

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