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CMOS RF modeling, characterization and applications / editors, M. Jamal Deen, Tor A. Fjeldly.

Contributor(s): Material type: TextTextSeries: Selected topics in electronics and systems ; v. 24.Publication details: River Edge, N.J. : World Scientific, ©2002.Description: 1 online resource (xi, 409 pages) : illustrationsContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9812777768
  • 9789812777768
Subject(s): Genre/Form: Additional physical formats: Print version:: CMOS RF modeling, characterization and applications.DDC classification:
  • 621.39/732 22
LOC classification:
  • TK7871.99.M44 C584 2002eb
Online resources:
Contents:
RF MOS measurements / F. Sischka and T. Gneiting -- MOSFET modeling and parameter extraction for RF IC's / M. Je [and others] -- MOSFET modeling for RF IC design / Y. Cheng -- RF CMOS noise characterization and modeling / C.-H. Chen and M.J. Deen -- SOI CMOS transistors for RF and microwave applications / D. Flandre, J.-P. Raskin, and D. Vanhoenacker-Janvier -- RF CMOS reliability / S. Naseh and M.J. Deen.
Summary: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (global positioning system) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
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Includes bibliographical references.

Print version record.

RF MOS measurements / F. Sischka and T. Gneiting -- MOSFET modeling and parameter extraction for RF IC's / M. Je [and others] -- MOSFET modeling for RF IC design / Y. Cheng -- RF CMOS noise characterization and modeling / C.-H. Chen and M.J. Deen -- SOI CMOS transistors for RF and microwave applications / D. Flandre, J.-P. Raskin, and D. Vanhoenacker-Janvier -- RF CMOS reliability / S. Naseh and M.J. Deen.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (global positioning system) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

English.

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