Breakdown phenomena in semiconductors and semiconductor devices / Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein.

By:

Levinshteĭn, M. E. (Mikhail Efimovich)

Contributor(s):

Material type: Text

TextSeries: Selected topics in electronics and systems ; v. 36.Publication details: New Jersey ; London : World Scientific, ©2005.Description: 1 online resource (xiii, 208 pages) : illustrationsContent type:

text

Media type:

computer

Carrier type:

online resource

ISBN:

9812563954
9789812563958
9812703330
9789812703330
1281372927
9781281372925
9786611372927
661137292X

Subject(s): Genre/Form:

Additional physical formats: Print version:: Breakdown phenomena in semiconductors and semiconductor devices.DDC classification:

621.38152 22

LOC classification:

TK7871.85 .L48 2005eb

Online resources:

Click here to access online

Contents:

Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX.

Summary: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi.

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Includes bibliographical references and indexes.

Print version record.

Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi.

English.

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