Breakdown phenomena in semiconductors and semiconductor devices / Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein.
Material type:![Text](/opac-tmpl/lib/famfamfam/BK.png)
- text
- computer
- online resource
- 9812563954
- 9789812563958
- 9812703330
- 9789812703330
- 1281372927
- 9781281372925
- 9786611372927
- 661137292X
- 621.38152 22
- TK7871.85 .L48 2005eb
Item type | Home library | Collection | Call number | Materials specified | Status | Date due | Barcode | |
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OPJGU Sonepat- Campus | E-Books EBSCO | Available |
Includes bibliographical references and indexes.
Print version record.
Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX.
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi.
English.
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