Advances in Porous Semiconductor Research

By:

Djenizian, Thierry [edt]

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Material type: Article

ArticleLanguage: English Publication details: Frontiers Media SA 2020Description: 1 electronic resource (183 p.)ISBN:

978-2-88963-649-5
9782889636495

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Summary: Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine.

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Item type	Home library	Collection	Call number	Materials specified	Status	Date due	Barcode
Electronic-Books	OPJGU Sonepat- Campus	E-Books Open Access			Available

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Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine.

Creative Commons https://creativecommons.org/licenses/by/4.0/ cc https://creativecommons.org/licenses/by/4.0/

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