Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications / editors, Niccolò Rinaldi, Michael Schröter.

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Front Cover; Half Title page; RIVER PUBLISHERS SERIES IN ELECTRONIC MATERIALS AND DEVICES; Title Page -- Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications; Copyright page; Contents; Preface; Acknowledgements; List of Contributors; List of Figures; List of Tables; List of Abbreviations; Introduction; Motivation and Objectives of the DOTSEVEN Project; Approach toward Achieving the Ambitious Goals; Overview of Results and Their Impact; References; Chapter 1 -- SiGe HBT Technology; 1.1 Introduction; 1.2 HBT Performance Factors.

1.3 HBT Device and Process Architectures Explored in the DOTSEVEN Project1.3.1 Selective Epitaxial Growth of the Base; 1.3.1.1 DPSA-SEG device architecture; 1.3.1.2 Approaches to overcome limitations of the DPSA-SEG architecture; 1.3.2 Non-selective Epitaxial Growth of the Base; 1.4 Optimization of the Vertical Doping Profile; 1.5 Optimization towards 700 GHz fMAX; 1.6 Summary; References; Chapter 2 -- Device Simulation; 2.1 Numerical Simulation; 2.2 Device Simulation; 2.2.1 TCAD Device Optimization; 2.2.2 Deterministic BTE Solvers; 2.2.3 Drift-diffusion and Hydrodynamic Transport Models.

2.2.4 Simulation Examples2.2.4.1 DD simulation; 2.2.4.2 HD simulation; 2.2.4.3 Effects beyond DD and HD transport; 2.2.4.4 Comparison with experimental data; 2.3 Advanced Electro-thermal Simulation; 2.3.1 Carrier-Phonon System in SiGe HBTs; 2.3.2 Deterministic and Self-consistent Electrothermal Simulation Approach; 2.3.3 Hot Phonon Effects in a Calibrated System; 2.3.4 Thermal Resistance Extraction from the Simulated DC Characteristics; 2.4 Microscopic Simulation of Hot-carrier Degradation; 2.4.1 Physics of Hot-carrier Degradation; 2.4.2 Modeling of Hot-carrier Effects.

2.4.3 Simulation of SiGe HBTs under Stress Conditions Close to the SOA LimitReferences; Chapter 3 -- SiGe HBT Compact Modeling; 3.1 Introduction; 3.2 Overview of HICUM Level 2; 3.3 Modeling of the Quasi-Static Transfer Current; 3.3.1 Basics of the GICCR; 3.3.2 SiGe HBT Extensions; 3.3.3 Temperature Dependence; 3.4 Charge Storage; 3.4.1 Critical Current; 3.4.2 SiGe Heterojunction Barrier; 3.5 Intra-Device Substrate Coupling; 3.6 SiGe HBT Parameter Extraction; 3.6.1 Extraction of Series Resistances; 3.6.2 Extraction of the Transfer Current Parameters; 3.6.3 Physics-Based Parameter Scaling.

3.6.3.1 Standard geometry scaling equation3.6.3.2 Generalized scaling equations; 3.7 Compact Model Application to Experimental Data; References; Chapter 4 -- (Sub)mm-wave Calibration; 4.1 Introduction; 4.2 Multi-mode Propagation and Calibration Transfer at mm-wave; 4.2.1 Parallel Plate Waveguide Mode; 4.2.2 Surface Wave Modes: TM0 and TE1; 4.2.3 Electrically Thin Substrates; 4.2.4 Calibration Transfer; 4.3 Direct On-wafer Calibration; 4.3.1 Characteristic Impedance Extraction of Transmission Lines; 4.4 Direct DUT-plane Calibration; 4.5 Conclusion; References; Chapter 5 -- Reliability.

5.1 Mixed-mode Stress Tests.

Annotation The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub- )mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub- )mm-wave circuit design and systems.

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