TY  - GEN
AU  - Saddow,Stephen Edward
AU  - Alquier,Daniel
AU  - Wang,Jing
AU  - La Via,Francesco
AU  - Fraga,Mariana
AU  - Saddow,Stephen Edward
AU  - Alquier,Daniel
AU  - Wang,Jing
AU  - La Via,Francesco
AU  - Fraga,Mariana
TI  - SiC based Miniaturized Devices
SN  - books978-3-03936-011-6
PY  - 2020///
CY  - Basel, Switzerland
PB  - MDPI - Multidisciplinary Digital Publishing Institute
KW  - History of engineering & technology
KW  - bicssc
KW  - high-power impulse magnetron sputtering (HiPIMS)
KW  - silicon carbide
KW  - aluminum nitride
KW  - thin film
KW  - Rutherford backscattering spectrometry (RBS)
KW  - grazing incidence X-ray diffraction (GIXRD)
KW  - Raman spectroscopy
KW  - 6H-SiC
KW  - indentation
KW  - deformation
KW  - material removal mechanisms
KW  - critical load
KW  - 4H-SiC
KW  - critical depth of cut
KW  - Berkovich indenter
KW  - cleavage strength
KW  - nanoscratching
KW  - power electronics
KW  - high-temperature converters
KW  - MEMS devices
KW  - SiC power electronic devices
KW  - neural interface
KW  - neural probe
KW  - neural implant
KW  - microelectrode array
KW  - MEA
KW  - SiC
KW  - 3C-SiC
KW  - doped SiC
KW  - n-type
KW  - p-type
KW  - amorphous SiC
KW  - epitaxial growth
KW  - electrochemical characterization
KW  - MESFET
KW  - simulation
KW  - PAE
KW  - bulk micromachining
KW  - electrochemical etching
KW  - circular membrane
KW  - bulge test
KW  - vibrometry
KW  - mechanical properties
KW  - Young's modulus
KW  - residual stress
KW  - FEM
KW  - semiconductor radiation detector
KW  - microstrip detector
KW  - power module
KW  - negative gate-source voltage spike
KW  - 4H-SiC, epitaxial layer
KW  - Schottky barrier
KW  - radiation detector
KW  - point defects
KW  - deep level transient spectroscopy (DLTS)
KW  - thermally stimulated current spectroscopy (TSC)
KW  - electron beam induced current spectroscopy (EBIC)
KW  - pulse height spectroscopy (PHS)
KW  - n/a
N1  - Open Access
N2  - MEMS devices are found in many of today's electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense
UR  - https://mdpi.com/books/pdfview/book/2408
UR  - https://directory.doabooks.org/handle/20.500.12854/68646
ER  -