TY  - GEN
AU  - Medjdoub,Farid
AU  - Medjdoub,Farid
TI  - Wide Bandgap Based Devices : Design, Fabrication and Applications
SN  - books978-3-0365-0567-1
PY  - 2021///
CY  - Basel, Switzerland
PB  - MDPI - Multidisciplinary Digital Publishing Institute
KW  - Technology: general issues
KW  - bicssc
KW  - GaN
KW  - high-electron-mobility transistor (HEMT)
KW  - ultra-wide band gap
KW  - GaN-based vertical-cavity surface-emitting laser (VCSEL)
KW  - composition-graded AlxGa1−xN electron blocking layer (EBL)
KW  - electron leakage
KW  - GaN laser diode
KW  - distributed feedback (DFB)
KW  - surface gratings
KW  - sidewall gratings
KW  - AlGaN/GaN
KW  - proton irradiation
KW  - time-dependent dielectric breakdown (TDDB)
KW  - reliability
KW  - normally off
KW  - power cycle test
KW  - SiC micro-heater chip
KW  - direct bonded copper (DBC) substrate
KW  - Ag sinter paste
KW  - wide band-gap (WBG)
KW  - thermal resistance
KW  - amorphous InGaZnO
KW  - thin-film transistor
KW  - nitrogen-doping
KW  - buried-channel
KW  - stability
KW  - 4H-SiC
KW  - turn-off loss
KW  - ON-state voltage
KW  - breakdown voltage (BV)
KW  - IGBT
KW  - wide-bandgap semiconductor
KW  - high electron mobility transistors
KW  - vertical gate structure
KW  - normally-off operation
KW  - gallium nitride
KW  - asymmetric multiple quantum wells
KW  - barrier thickness
KW  - InGaN laser diodes
KW  - optical absorption loss
KW  - electron leakage current
KW  - wide band gap semiconductors
KW  - numerical simulation
KW  - terahertz Gunn diode
KW  - grooved-anode diode
KW  - Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
KW  - vertical breakdown voltage
KW  - buffer trapping effect
KW  - gallium nitride (GaN)
KW  - power switching device
KW  - active power filter (APF)
KW  - power quality (PQ)
KW  - metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)
KW  - recessed gate
KW  - double barrier
KW  - high-electron-mobility transistors
KW  - copper metallization
KW  - millimeter wave
KW  - wide bandgap semiconductors
KW  - flexible devices
KW  - silver nanoring
KW  - silver nanowire
KW  - polyol method
KW  - cosolvent
KW  - tungsten trioxide film
KW  - spin coating
KW  - optical band gap
KW  - morphology
KW  - electrochromism
KW  - self-align
KW  - hierarchical nanostructures
KW  - ZnO nanorod/NiO nanosheet
KW  - photon extraction efficiency
KW  - photonic emitter
KW  - wideband
KW  - HEMT
KW  - power amplifier
KW  - jammer system
KW  - GaN 5G
KW  - high electron mobility transistors (HEMT)
KW  - new radio
KW  - RF front-end
KW  - AESA radars
KW  - transmittance
KW  - distortions
KW  - optimization
KW  - GaN-on-GaN
KW  - schottky barrier diodes
KW  - high-energy α-particle detection
KW  - low voltage
KW  - thick depletion width detectors
KW  - n/a
N1  - Open Access
N2  - Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as "ultra-wide bandgap" materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III-V, and other compound semiconductor devices and integrated circuits
UR  - https://mdpi.com/books/pdfview/book/3759
UR  - https://directory.doabooks.org/handle/20.500.12854/76339
ER  -