TY  - BOOK
AU  - Shur,Michael
AU  - Rumyantsev,Sergey L.
AU  - Levinshteĭn,M.E.
TI  - SiC materials and devices
T2  - Selected topics in electronics and systems
SN  - 9789812773371
AV  - TK7871.15.S56 S528eb vol. 1
U1  - 621.3815/2 22
PY  - 2006///
CY  - New Jersey, London
PB  - World Scientific
KW  - Silicon carbide
KW  - Electric properties
KW  - Semiconductors
KW  - Semi-conducteurs
KW  - semiconductor
KW  - aat
KW  - TECHNOLOGY & ENGINEERING
KW  - Electronics
KW  - Solid State
KW  - bisacsh
KW  - fast
KW  - Electronic books
N1  - Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner; Includes bibliographical references; Preface; CONTENTS; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime; 9 Properties of SiC/SiO2 Interfaces; Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts; 3 Specific Contact Resistance; 4 Ohmic Contacts to n-type SiC; 5 Ohmic Contacts to p-type SiC6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 7 New Trends in Ohmic Contacts for Practical Devices; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode; 1 Introduction; 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction; 2 PiN Rectifier Design and Operation; 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions; AcknowledgementsReferences; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors; 3 Silicon Carbide Varactors; 4 Silicon carbide Schotty barrier mixer diodes; 5 Silicon carbide p-i-n diode; 6 Silicon carbide IMPATT diode; 7 Conclusions; 8 Acknowledgments; 9 References; SiC Thyristors; 1 Introduction; 2 Turn-on process in the thyristors; 3 Steady-state current-voltage characteristics; 4 Turn-off performance; 5 Frequency properties; 6 Critical charge; 7 Conclusion; Acknowledgments; References; Silicon Carbide Static Induction Transistors; 1 Introduction and History of the Static Induction Transistor2 Static Induction Transistor Device Structures; 3 Current-Voltage Characteristics of the Static Induction Transistor; 4 Static Induction Transistor Applications; 5 Summary; 6 Acknowledgements; 7 References
N2  - After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi
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