TY  - BOOK
AU  - Chaussende,Didier
AU  - Ferro,Gabriel
ED  - International Conference on Silicon Carbide and Related Materials
TI  - Silicon carbide and related materials 2014: selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France 
T2  - Materials science forum,
SN  - 9783038269434
AV  - TK7871.15.S56 S553 2013 
U1  - 620.1/93620.11620.193 
PY  - 2015///
CY  - Switzerland
PB  - Trans Tech Publications
KW  - Silicon carbide
KW  - Congresses
KW  - Electric properties
KW  - Silicon-carbide thin films
KW  - Nitrides
KW  - Graphene
KW  - Crystal growth
KW  - Wide gap semiconductors
KW  - Materials
KW  - Technological innovations
KW  - Couches minces de carbure de silicium
KW  - Congrès
KW  - Nitrures
KW  - Graphène
KW  - Cristaux
KW  - Croissance
KW  - Semi-conducteurs à large bande interdite
KW  - Matériaux
KW  - Innovations
KW  - TECHNOLOGY & ENGINEERING
KW  - Mechanical
KW  - bisacsh
KW  - TECHNOLOGY & ENGINEERING / Engineering (General)
KW  - TECHNOLOGY & ENGINEERING / Reference
KW  - fast
KW  - Electronic books
KW  - Conference papers and proceedings
N1  - This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ...  -- Preface
N2  - Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effect Transistors; IV.3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science
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