Strain-Engineered MOSFETs
Material type: ArticleLanguage: English Publication details: CRC Press 20121128ISBN:- b13014
- 9781138075603
Item type | Home library | Collection | Call number | Materials specified | Status | Date due | Barcode | |
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Electronic-Books | OPJGU Sonepat- Campus | E-Books Open Access | Available |
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This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
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