Advanced high speed devices / editors, Michael S. Shur, Paul Maki.

Includes bibliographical references.

Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang [and others] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji [and others] -- Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran [and others] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath [and others] -- Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula [and others] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert [and others] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy [and others] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu [and others] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen [and others] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari [and others] -- GaN transistors for power switching and millimeter-wave applications / T. Ueda [and others] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann [and others] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis.

Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.

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