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Physics, chemistry and application of nanostructures : review and short notes to Nanomeeting-2001 : Minsk, Belarus 22-25 May 2001 / editors, V.E. Borisenko, S.V. Gaponenko, V.S. Gurin.

By: Contributor(s): Material type: TextTextPublication details: Singapore ; River Edge, NJ : World Scientific, ©2001.Description: 1 online resource (xviii, 488 pages) : illustrationsContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9789812810076
  • 9812810072
  • 1281951617
  • 9781281951618
  • 9786611951610
  • 661195161X
Subject(s): Genre/Form: Additional physical formats: Print version:: Physics, chemistry and application of nanostructures.DDC classification:
  • 620/.5 22
LOC classification:
  • QC176.8.N35 N35 2001eb
Online resources:
Contents:
Foreword; CONTENTS; PHYSICS OF NANOSTRUCTURES; Discovery and understanding of nanoworld in the XX-th century: main achievements in the mirror of the Nobel Prizes; Self-assembled InGaAs quantum dot superlattices; Multiexciton dynamics of GaAs single quantum dots; Photoreflectance Investigations of low dimensional semiconductor structures; Thermoelectric properties of chaotic quantum dots; Polarons in quantum wells; Self-assembling SiGe dots: nucleation and growth; Stress and strain distributions in Ge dots on Si(001) by molecular dynamics simulation.
Light emission from semiconducting silicide nanostructures in siliconPhysics of multiwalled carbon nanotubes; Ultra thin C60-based films: molecular arrangement and electronic states; On a possibility of the Mott transition in a quantum dot ensemble; Screening of extra point charge in a few particle coulomb system; A superlattice with resonant states in a unit cell: the band structure and electron transitions; Dispersion of guided plasmon-polaritons in a planar Bragg microresonator with two-dimensional electron system; Optical properties of fractal Cantor-like multilayer nanostructures.
I-V curves of short intentionally disordered superlattices in vertical directionPhonon-plasmon interaction in tunneling GaAs/AlAs superlattices: experiment and calculations; Negative and persistent positive photoconductivity in p-type Al0.5Ga0.5As / GaAs / Al0.5Ga0.5As; Raman and photoluminescence studies of the interface reconstructions in GaAs/AlAs superlattices grown on (311) and (001) surfaces; Investigation of surface morphology features and local photoelectric properties of InAs/GaAs quantum dot structures; Controllable one-dimensional photonic structures with n-i-p-i crystal layers.
Influence of electron irradiation on carrier recombination and intradot relaxation in InGaAs/GaAs quantum dot structuresElectric field effect on absorption spectra of an ensemble of close-packed CdSe nanocrystals; Ge nanocrystals in SiC: ab initio supercell calculations of optical properties; Surface energies of Ge and Si and consequences for nanocrystallites; 2D nanostructures and 3D silicide nanocrystallites at rare-earth metal/Si(111) interfaces: formation mechanism and properties; Photoluminescence of the silicon carbide nanoclusters embeded into porous silicon.
Exciton recombination mechanism in light emitting nanocrystalline siliconTime-resolved photoluminescence of nanocrystalline silicon films obtained by laser ablation; Electron-phonon coupling in heavily doped silicon; Influence of surface phases on electrical conductivity of silicon surface; Morphology and optical properties of Si(111)/CrSi2/Si and Si(111)/Mg2Si/Si systems with self-organized quantum dots; Microcavity enhancement of second-harmonic generation and Raman scattering in photonic crystals of porous silicon.
Summary: The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices.
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Includes bibliographical references and index.

Print version record.

The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices.

Foreword; CONTENTS; PHYSICS OF NANOSTRUCTURES; Discovery and understanding of nanoworld in the XX-th century: main achievements in the mirror of the Nobel Prizes; Self-assembled InGaAs quantum dot superlattices; Multiexciton dynamics of GaAs single quantum dots; Photoreflectance Investigations of low dimensional semiconductor structures; Thermoelectric properties of chaotic quantum dots; Polarons in quantum wells; Self-assembling SiGe dots: nucleation and growth; Stress and strain distributions in Ge dots on Si(001) by molecular dynamics simulation.

Light emission from semiconducting silicide nanostructures in siliconPhysics of multiwalled carbon nanotubes; Ultra thin C60-based films: molecular arrangement and electronic states; On a possibility of the Mott transition in a quantum dot ensemble; Screening of extra point charge in a few particle coulomb system; A superlattice with resonant states in a unit cell: the band structure and electron transitions; Dispersion of guided plasmon-polaritons in a planar Bragg microresonator with two-dimensional electron system; Optical properties of fractal Cantor-like multilayer nanostructures.

I-V curves of short intentionally disordered superlattices in vertical directionPhonon-plasmon interaction in tunneling GaAs/AlAs superlattices: experiment and calculations; Negative and persistent positive photoconductivity in p-type Al0.5Ga0.5As / GaAs / Al0.5Ga0.5As; Raman and photoluminescence studies of the interface reconstructions in GaAs/AlAs superlattices grown on (311) and (001) surfaces; Investigation of surface morphology features and local photoelectric properties of InAs/GaAs quantum dot structures; Controllable one-dimensional photonic structures with n-i-p-i crystal layers.

Influence of electron irradiation on carrier recombination and intradot relaxation in InGaAs/GaAs quantum dot structuresElectric field effect on absorption spectra of an ensemble of close-packed CdSe nanocrystals; Ge nanocrystals in SiC: ab initio supercell calculations of optical properties; Surface energies of Ge and Si and consequences for nanocrystallites; 2D nanostructures and 3D silicide nanocrystallites at rare-earth metal/Si(111) interfaces: formation mechanism and properties; Photoluminescence of the silicon carbide nanoclusters embeded into porous silicon.

Exciton recombination mechanism in light emitting nanocrystalline siliconTime-resolved photoluminescence of nanocrystalline silicon films obtained by laser ablation; Electron-phonon coupling in heavily doped silicon; Influence of surface phases on electrical conductivity of silicon surface; Morphology and optical properties of Si(111)/CrSi2/Si and Si(111)/Mg2Si/Si systems with self-organized quantum dots; Microcavity enhancement of second-harmonic generation and Raman scattering in photonic crystals of porous silicon.

English.

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