Ultra clean processing of semiconductor surfaces XIV : 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018) held in Bruges, Belgium, September 22-24, 2008 / edited by Paul Mertens, Marc Meuris, Marc Heyns.

Includes bibliographical references and indexes.

Online resource; title from PDF title page (EBSCO, viewed October 4, 2018).

"Selected, peer reviewed papers from the 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018), September 3-5, 2018, Leuven, Belgium."

Intro; Ultra Clean Processing of Semiconductor Surfaces XIV; Preface; Table of Contents; Chapter 1: Keynote Paper; Industry Context for Semiconductor Wet Etch and Surface Preparation; Chapter 2: Surface Cleaning and Surface Functionalization; Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography; Organic Material Removal by Thermally Activated Ozone Gas; Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber

Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale BiofunctionalizationChapter 3: Surface Preparation of III-V Semiconductors; Toward the Surface Preparation of InGaAs for the Future CMOS Integration; Effect of WET treatment on Group III-V Compound Semiconductor Surface; Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry; Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent; Chapter 4: Mechanical Particle Removal

Removal of CrN Contamination from EUV Mask Backside Using Dry CleaningDamage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology; An Observation Method of Real Contact Area during PVA Brush Scrubbing; Electrostatic Discharge Control and Visualization in Spray Nozzle; Chapter 5: Si and Ge Etching; Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process; Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and MorphologyChapter 6: Selective SixGey Etching for Nanowire Release; Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs; SiGe vs. Si Selective Wet Etching for Si Gate-all-Around; A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks; Chapter 7: Gate-all-Around Gate Stack Processing; Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues

Low Temperature SiGe Steam Oxide -- Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner SpacerRMG Patterning by Digital Wet Etching of Polycrystalline Metal Films; Chapter 8: Non-Semiconductor Film Etching; Wet Etchants Penetration through Photoresist during Wet Patterning; Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?; Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach; Chapter 9: Wetting Drying and Pattern Collapse; Drying Stability and Critical Height of Repeating Line/Space Structures

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