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The physics of diamond : Varenna on Lake Como, Villa Monastero, 23 July-2 August, 1996 / edited by A. Paoletti and A. Tucciarone.

By: Contributor(s): Material type: TextTextSeries: International School of Physics "Enrico Fermi." Proceedings of the International School of Physics "Enrico Fermi" ; course 135.Publisher: Amsterdam ; Washington, DC : IOS Press, 1997Description: 1 online resource (xviii, 608 pages) : illustrationsContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9781614992202
  • 1614992207
  • 1299990436
  • 9781299990432
Other title:
  • Fisica del diamante [Added title page title]
Subject(s): Genre/Form: Additional physical formats: Print version:: Physics of diamond.DDC classification:
  • 666/.88 22
LOC classification:
  • TP873.5.D5 I54 1996
Other classification:
  • 35.48
  • UD 4615
  • UQ 8220
Online resources:
Contents:
Title Page; Indice; Foreword; Gruppo fotografico dei partecipanti al Corso; A short history of diamond synthesis; Introduction; Scientific understanding of diamond; High-pressure synthesis; Diamond synthesis at metastable conditions; Earliest work; Work at Case Western Reserve University, Cleveland; Work at the Physical Chemistry Institute, Moscow; Work at NIRIM, Tsukuba, Japan; Summary; Structure and thermochemistry of diamond; Introduction; Structure of diamond and graphite; Phase chemistry of carbon; Thermodynamic properties of diamond; Calculation of diamond-graphite equilibrium line.
Regions of metastabilityThermochemistry of hydrogenated carbon clusters; Relative energies of hydrogenated clusters; Volmer-Ostwald rules; Thermodynamic paradox; Transformation of graphite to diamond at low pressures; Counterexample; Comments on example; Ternary C-H-O diagrams; Computation of C-H-O phase diagrams; Interpretation of C-H-O diagrams; Steady-state analysis of nucleation, growth and non-diamond carbon incorporation during the chemical vapor deposition of diamond; Introduction; Diamond nucleation on graphite; Surface coverage by hydrogen; Growth mechanisms.
Concentration of sp^2 materialIncorporation of non-diamond carbon; Diamond nucleation; Discussion; Conclusions; Plasma chemical vapor deposition of diamond films; Introduction; Diamonds from 2.45 GHz microwave plasmas; Tubular reactor designs; The ""bell jar"" reactor; The ASTeX high-pressure microwave source reactor; The Wavemat reactor; Magnetized and ECR plasmas; 2.45 GHz plasma torches; Diamonds from remote microwave plasmas; Other 2.45 GHz plasmas approaches; Drawbacks of 2.45 GHz plasmas; Diamonds from 915 MHz plasmas; Gas compositions used in microwave plasma diamond CVD.
The C/H/O diagram of diamond CVDC/H/halogen mixtures; Summary and outlook; Heteroepitaxial and textured growth of diamond thin films; Introduction; Heteroepitaxy on silicon; Introduction; Bias-induced epitaxial growth, process and nature of deposits; About the mechanism of bias-induced diamond nucleation (BEN or BIN?); Structure and properties of heteroepitaxial diamond films; Heteroepitaxy on other substrates; Textured diamond films; Texturing of thin films by evolutionary selection of crystallites; Growth morphology of diamond; Tuning of diamond growth morphology and film texture.
Bias-induced diamond film textureDiamond domain investigation and CVD diamond growth optimization through plasma emission spectroscopy; Introduction; Gas composition and diamond growth; Analysis of the diamond domain; Plasma emission spectra and film properties; Diamond growth and quality; Diamond preferential orientation; Textured films; Highly oriented (epitaxial) films; Atomistic simulations of carbon systems using a density-functional-based molecular-dynamics method; Introduction; Simulation methods; Total energies and interatomic forces; Classical concepts; Density-functional theory.
Summary: Diamond is an extreme material among possible atomic aggregations in nature, and as such has many extreme properties. This unique position makes it a fascinating subject both for science and for applications. This has been particularly true in recent years, since the surprising discovery at Union Carbide (1953) of the possibility of chemical vapour deposition of diamond films at low pressures, where diamond is metastable with respect to graphite. This discovery cleared the way to the development of economical deposition techniques that have been obtaining progressively better-quality diamond.
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Print version record.

Includes bibliographical references.

Title Page; Indice; Foreword; Gruppo fotografico dei partecipanti al Corso; A short history of diamond synthesis; Introduction; Scientific understanding of diamond; High-pressure synthesis; Diamond synthesis at metastable conditions; Earliest work; Work at Case Western Reserve University, Cleveland; Work at the Physical Chemistry Institute, Moscow; Work at NIRIM, Tsukuba, Japan; Summary; Structure and thermochemistry of diamond; Introduction; Structure of diamond and graphite; Phase chemistry of carbon; Thermodynamic properties of diamond; Calculation of diamond-graphite equilibrium line.

Regions of metastabilityThermochemistry of hydrogenated carbon clusters; Relative energies of hydrogenated clusters; Volmer-Ostwald rules; Thermodynamic paradox; Transformation of graphite to diamond at low pressures; Counterexample; Comments on example; Ternary C-H-O diagrams; Computation of C-H-O phase diagrams; Interpretation of C-H-O diagrams; Steady-state analysis of nucleation, growth and non-diamond carbon incorporation during the chemical vapor deposition of diamond; Introduction; Diamond nucleation on graphite; Surface coverage by hydrogen; Growth mechanisms.

Concentration of sp^2 materialIncorporation of non-diamond carbon; Diamond nucleation; Discussion; Conclusions; Plasma chemical vapor deposition of diamond films; Introduction; Diamonds from 2.45 GHz microwave plasmas; Tubular reactor designs; The ""bell jar"" reactor; The ASTeX high-pressure microwave source reactor; The Wavemat reactor; Magnetized and ECR plasmas; 2.45 GHz plasma torches; Diamonds from remote microwave plasmas; Other 2.45 GHz plasmas approaches; Drawbacks of 2.45 GHz plasmas; Diamonds from 915 MHz plasmas; Gas compositions used in microwave plasma diamond CVD.

The C/H/O diagram of diamond CVDC/H/halogen mixtures; Summary and outlook; Heteroepitaxial and textured growth of diamond thin films; Introduction; Heteroepitaxy on silicon; Introduction; Bias-induced epitaxial growth, process and nature of deposits; About the mechanism of bias-induced diamond nucleation (BEN or BIN?); Structure and properties of heteroepitaxial diamond films; Heteroepitaxy on other substrates; Textured diamond films; Texturing of thin films by evolutionary selection of crystallites; Growth morphology of diamond; Tuning of diamond growth morphology and film texture.

Bias-induced diamond film textureDiamond domain investigation and CVD diamond growth optimization through plasma emission spectroscopy; Introduction; Gas composition and diamond growth; Analysis of the diamond domain; Plasma emission spectra and film properties; Diamond growth and quality; Diamond preferential orientation; Textured films; Highly oriented (epitaxial) films; Atomistic simulations of carbon systems using a density-functional-based molecular-dynamics method; Introduction; Simulation methods; Total energies and interatomic forces; Classical concepts; Density-functional theory.

Diamond is an extreme material among possible atomic aggregations in nature, and as such has many extreme properties. This unique position makes it a fascinating subject both for science and for applications. This has been particularly true in recent years, since the surprising discovery at Union Carbide (1953) of the possibility of chemical vapour deposition of diamond films at low pressures, where diamond is metastable with respect to graphite. This discovery cleared the way to the development of economical deposition techniques that have been obtaining progressively better-quality diamond.

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