Ultra clean processing of semiconductor surfaces X : selected, peer reviewed papers from the 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 20-22, 2010, Ostend, Belgium / edited by Paul Mertens, Marc Meuris and Marc Heyns.

Includes bibliographical references and indexes.

Print version record.

The International Symposium on Ultra-Clean Processing of Semiconductor Surfaces (UCPSS) is a bi-annual conference which has been organized by IMEC since 1992. The scope of the symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacture. At first, silicon was typically the main semiconductor of interest. As other semiconducting materials such as SiGe, SiC, Ge and III-V compounds came under consideration for future devices, the scope was broadened so as to include these materials. Parallelling the fast-moving CMOS industry, the photovoltaic industry has also recognized the need to make improvements in cleaning. Moreover, in order to promote these semiconductor cleaning activities in PV, it was decided to add a special session focused on this topic.

Ultra Clean Processing of Semiconductor Surfaces X; Preface, Committees and Sponsors; Table of Contents; Keynote; Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap; Chapter 1: FEOL Surface Chemistry, Etching and Passivation; Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface; Web Adds; Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers; Cleaning and Surface Preparation for SiGe and Ge Channel Device

S-Passivation of the Ge Gate Stack Using (NH4)2SWet Chemical Cleaning of InP and InGaAs; Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique; Effect of Wet Cleanings on GST Surface: XPS Characterization; Study of the Etching Mechanism of Heavily Doped Si in HF; Study on Al2O3 Film in Anhydrous HF Vapor; Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory; Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate SchemeChapter 2: FEOL: Cleaning- and Drying-Induced Defects: Charging, Collapse of Fragile High Aspect Ratio Structures; Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process; Surface Charging Induced Gate Oxide Degradation; Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity; Effect of Drying Liquid on Stiction of High Aspect Ratio Structures

Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning SystemChapter 3: FEOL: Photo Resist Removal; Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray; High Temperature SPM Process Study for Stripping of Implanted Photoresist; Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip; Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist

All-Wet, Metal-Compatible High-Dose-Implanted Photoresist StripApplicable Solvent Photoresist Strip Process for High-K/Metal Gate; Study on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPM; Using the Background Signal of a Light Scattering Tool for I/I Photo Resist Strip Optimization and Monitoring; Wafer Edge Bead Cleaning with Laser Radiation and Reactive Gas; Chapter 4: Mechanical Cleaning Forces: Metrology; Effects of Interfacial Strength and Dimension of Structures on Physical Cleaning Window

English.

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