Nanowire Field-Effect Transistor (FET) (Record no. 3018769)

MARC details
000 -LEADER
fixed length control field 04365naaaa2201093uu 4500
001 - CONTROL NUMBER
control field https://directory.doabooks.org/handle/20.500.12854/68381
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220714193751.0
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number books978-3-03936-209-7
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783039362080
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783039362097
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.3390/books978-3-03936-209-7
Terms of availability doi
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title English
042 ## - AUTHENTICATION CODE
Authentication code dc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TBX
Source bicssc
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name García-Loureiro, Antonio
Relator code edt
9 (RLIN) 1619995
245 10 - TITLE STATEMENT
Title Nanowire Field-Effect Transistor (FET)
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc Basel, Switzerland
Name of publisher, distributor, etc MDPI - Multidisciplinary Digital Publishing Institute
Date of publication, distribution, etc 2021
300 ## - PHYSICAL DESCRIPTION
Extent 1 electronic resource (96 p.)
506 0# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Open Access
Source of term star
Standardized terminology for access restriction Unrestricted online access
520 ## - SUMMARY, ETC.
Summary, etc In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE
Terms governing use and reproduction Creative Commons
-- https://creativecommons.org/licenses/by/4.0/
-- cc
-- https://creativecommons.org/licenses/by/4.0/
546 ## - LANGUAGE NOTE
Language note English
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element History of engineering & technology
Source of heading or term bicssc
9 (RLIN) 1129967
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Uncontrolled term random dopant
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Uncontrolled term drift-diffusion
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Uncontrolled term variability
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Uncontrolled term device simulation
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Uncontrolled term nanodevice
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Uncontrolled term screening
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Uncontrolled term Coulomb interaction
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Uncontrolled term III-V
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Uncontrolled term TASE
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Uncontrolled term MOSFETs
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Uncontrolled term Integration
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Uncontrolled term nanowire field-effect transistors
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Uncontrolled term silicon nanomaterials
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Uncontrolled term charge transport
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Uncontrolled term one-dimensional multi-subband scattering models
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Uncontrolled term Kubo-Greenwood formalism
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Uncontrolled term schrödinger-poisson solvers
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Uncontrolled term DC and AC characteristic fluctuations
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Uncontrolled term gate-all-around
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Uncontrolled term nanowire
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Uncontrolled term work function fluctuation
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Uncontrolled term aspect ratio of channel cross-section
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Uncontrolled term timing fluctuation
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Uncontrolled term noise margin fluctuation
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Uncontrolled term power fluctuation
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Uncontrolled term CMOS circuit
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Uncontrolled term statistical device simulation
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Uncontrolled term variability effects
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Uncontrolled term Monte Carlo
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Uncontrolled term Schrödinger based quantum corrections
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Uncontrolled term quantum modeling
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Uncontrolled term nonequilibrium Green's function
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Uncontrolled term nanowire transistor
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Uncontrolled term electron-phonon interaction
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Uncontrolled term phonon-phonon interaction
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Uncontrolled term self-consistent Born approximation
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Uncontrolled term lowest order approximation
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Uncontrolled term Richardson extrapolation
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Uncontrolled term ZnO
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Uncontrolled term field effect transistor
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Uncontrolled term conduction mechanism
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Uncontrolled term metal gate
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Uncontrolled term material properties
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Uncontrolled term fabrication
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Uncontrolled term modelling
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Uncontrolled term nanojunction
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Uncontrolled term constriction
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Uncontrolled term quantum electron transport
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Uncontrolled term quantum confinement
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Uncontrolled term dimensionality reduction
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Uncontrolled term stochastic Schrödinger equations
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Uncontrolled term geometric correlations
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Uncontrolled term silicon nanowires
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Uncontrolled term nano-transistors
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Uncontrolled term quantum transport
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Uncontrolled term hot electrons
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Uncontrolled term self-cooling
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Uncontrolled term nano-cooling
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Uncontrolled term thermoelectricity
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Uncontrolled term heat equation
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Uncontrolled term non-equilibrium Green functions
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Uncontrolled term power dissipation
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Kalna, Karol
Relator code edt
9 (RLIN) 1619996
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Seoane, Natalia
Relator code edt
9 (RLIN) 1619997
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name García-Loureiro, Antonio
Relator code oth
9 (RLIN) 1619995
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Kalna, Karol
Relator code oth
9 (RLIN) 1619996
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Seoane, Natalia
Relator code oth
9 (RLIN) 1619997
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://mdpi.com/books/pdfview/book/3394">https://mdpi.com/books/pdfview/book/3394</a>
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Public note DOAB: download the publication
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://directory.doabooks.org/handle/20.500.12854/68381">https://directory.doabooks.org/handle/20.500.12854/68381</a>
-- 0
Public note DOAB: description of the publication
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