SiC materials and devices. (Record no. 2894082)

MARC details
000 -LEADER
fixed length control field 05923cam a2200769 a 4500
001 - CONTROL NUMBER
control field ocn182664344
003 - CONTROL NUMBER IDENTIFIER
control field OCoLC
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220712213505.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cnu---unuuu
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 071201s2006 njua ob 000 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency N$T
Language of cataloging eng
Description conventions pn
Transcribing agency N$T
Modifying agency YDXCP
-- OCLCQ
-- IDEBK
-- OCLCQ
-- OCLCF
-- OCLCO
-- NLGGC
-- OCLCQ
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-- UX0
-- DEBSZ
-- OCLCQ
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-- MERUC
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-- ICG
-- OCLCQ
-- STF
-- DKC
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-- OCLCQ
-- AJS
-- OCLCQ
-- OCLCO
-- OCLCQ
019 ## -
-- 275174220
-- 879074241
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9789812773371
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9812773371
Qualifying information (electronic bk.)
029 1# - (OCLC)
OCLC library identifier AU@
System control number 000058361031
029 1# - (OCLC)
OCLC library identifier DEBBG
System control number BV043061886
029 1# - (OCLC)
OCLC library identifier DEBBG
System control number BV044178862
029 1# - (OCLC)
OCLC library identifier DEBSZ
System control number 422168661
029 1# - (OCLC)
OCLC library identifier DEBSZ
System control number 431677107
029 1# - (OCLC)
OCLC library identifier DEBSZ
System control number 456560572
029 1# - (OCLC)
OCLC library identifier GBVCP
System control number 802393667
029 1# - (OCLC)
OCLC library identifier NZ1
System control number 12551503
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)182664344
Canceled/invalid control number (OCoLC)275174220
-- (OCoLC)879074241
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7871.15.S56
Item number S528eb vol. 1
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 008100
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 008090
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815/2
Edition number 22
049 ## - LOCAL HOLDINGS (OCLC)
Holding library MAIN
245 00 - TITLE STATEMENT
Title SiC materials and devices.
Number of part/section of a work Volume 1 /
Statement of responsibility, etc edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein.
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc New Jersey ;
-- London :
Name of publisher, distributor, etc World Scientific,
Date of publication, distribution, etc ©2006.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (v, 1033 pages) :
Other physical details illustrations
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
490 1# - SERIES STATEMENT
Series statement Selected topics in electronics and systems ;
Volume number/sequential designation v. 40
500 ## - GENERAL NOTE
General note Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner.
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references.
588 0# -
-- Print version record.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Preface; CONTENTS; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime; 9 Properties of SiC/SiO2 Interfaces; Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts; 3 Specific Contact Resistance; 4 Ohmic Contacts to n-type SiC.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 5 Ohmic Contacts to p-type SiC6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 7 New Trends in Ohmic Contacts for Practical Devices; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode; 1 Introduction; 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction; 2 PiN Rectifier Design and Operation; 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note AcknowledgementsReferences; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors; 3 Silicon Carbide Varactors; 4 Silicon carbide Schotty barrier mixer diodes; 5 Silicon carbide p-i-n diode; 6 Silicon carbide IMPATT diode; 7 Conclusions; 8 Acknowledgments; 9 References; SiC Thyristors; 1 Introduction; 2 Turn-on process in the thyristors; 3 Steady-state current-voltage characteristics; 4 Turn-off performance; 5 Frequency properties; 6 Critical charge; 7 Conclusion; Acknowledgments; References; Silicon Carbide Static Induction Transistors.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 1 Introduction and History of the Static Induction Transistor2 Static Induction Transistor Device Structures; 3 Current-Voltage Characteristics of the Static Induction Transistor; 4 Static Induction Transistor Applications; 5 Summary; 6 Acknowledgements; 7 References.
520 ## - SUMMARY, ETC.
Summary, etc After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi.
590 ## - LOCAL NOTE (RLIN)
Local note eBooks on EBSCOhost
Provenance (VM) [OBSOLETE] EBSCO eBook Subscription Academic Collection - Worldwide
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicon carbide
General subdivision Electric properties.
9 (RLIN) 183554
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
9 (RLIN) 147500
650 #2 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors
9 (RLIN) 147500
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semi-conducteurs.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element semiconductor.
Source of heading or term aat
9 (RLIN) 882826
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING
General subdivision Electronics
-- Solid State.
Source of heading or term bisacsh
9 (RLIN) 886630
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING
General subdivision Electronics
-- Semiconductors.
Source of heading or term bisacsh
9 (RLIN) 886629
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
Source of heading or term fast
-- (OCoLC)fst01112198
9 (RLIN) 147500
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicon carbide
General subdivision Electric properties.
Source of heading or term fast
-- (OCoLC)fst01118659
9 (RLIN) 183554
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Shur, Michael.
9 (RLIN) 150966
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Rumyantsev, Sergey L.
9 (RLIN) 381659
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Levinshteĭn, M. E.
Fuller form of name (Mikhail Efimovich)
9 (RLIN) 1327420
730 02 - ADDED ENTRY--UNIFORM TITLE
Uniform title Journal of high speed electronics & systems.
9 (RLIN) 183556
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Print version:
Title SiC materials and devices. Volume 1.
Place, publisher, and date of publication New Jersey ; London : World Scientific, ©2006
International Standard Book Number 9812568352
-- 9789812568359
Record control number (DLC) 2007272569
-- (OCoLC)71298024
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Selected topics in electronics and systems ;
Volume number/sequential designation v. 40.
9 (RLIN) 150968
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210570">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210570</a>
938 ## -
-- EBL - Ebook Library
-- EBLB
-- EBL1679458
938 ## -
-- EBSCOhost
-- EBSC
-- 210570
938 ## -
-- YBP Library Services
-- YANK
-- 2740335
994 ## -
-- 92
-- INOPJ
Holdings
Withdrawn status Lost status Damaged status Not for loan Collection code Home library Current library Date acquired Total Checkouts Date last seen Price effective from Koha item type
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