The formation of structural imperfections in semiconductor silicon / (Record no. 2834723)

MARC details
000 -LEADER
fixed length control field 04529cam a2200685 i 4500
001 - CONTROL NUMBER
control field on1079759430
003 - CONTROL NUMBER IDENTIFIER
control field OCoLC
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220712083044.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cnu---unuuu
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 181220s2018 enka ob 000 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency N$T
Language of cataloging eng
Description conventions rda
-- pn
Transcribing agency N$T
Modifying agency YDX
-- EBLCP
-- UKMGB
-- ESU
-- UKAHL
-- OCLCQ
-- ELBRO
-- OCLCQ
-- OCLCO
015 ## - NATIONAL BIBLIOGRAPHY NUMBER
National bibliography number GBB902414
Source bnb
016 7# - NATIONAL BIBLIOGRAPHIC AGENCY CONTROL NUMBER
Record control number 019193416
Source Uk
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781527523425
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 152752342X
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Cancelled/invalid ISBN 1527506355
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Cancelled/invalid ISBN 9781527506350
029 1# - (OCLC)
OCLC library identifier UKMGB
System control number 019193416
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)1079759430
037 ## - SOURCE OF ACQUISITION
Stock number 9781527523425
Source of stock number/acquisition Cambridge Scholars Publishing
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC611.6.D4
Item number T35 2018eb
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 009070
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815/2
Edition number 23
049 ## - LOCAL HOLDINGS (OCLC)
Holding library MAIN
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Talanin, V. I.
Fuller form of name (Vitaliĭ Igorʹevich),
Relator term author.
9 (RLIN) 1218613
245 14 - TITLE STATEMENT
Title The formation of structural imperfections in semiconductor silicon /
Statement of responsibility, etc by V.I. Talanin and I.E. Talanin.
264 #1 -
-- Newcastle upon Tyne, UK :
-- Cambridge Scholars Publishing,
-- 2018.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (xii, 269 pages) :
Other physical details illustrations
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
520 ## - SUMMARY, ETC.
Summary, etc "Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students."--
-- Back cover
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references (pages 239-267).
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Chapter one. Growth of dislocation-free silicon single crystals from melt and defect formation -- Chapter two. Physical modeling of defect formation processes in dislocation-free single crystals of silicon -- Chapter three. Physical basis of a heterogenous (two-stage) model of grown-in microdefect formation -- Chapter four. High-temperature precipitation of impurity in dislocation-free silicon single crystals -- Chapter five. The formation of microvoids and interstitial dislocation loops during crystal cooling after growing -- Chapter six. General approach to the engineering of defects in semiconductor silicon.
588 0# -
-- Print version record.
590 ## - LOCAL NOTE (RLIN)
Local note eBooks on EBSCOhost
Provenance (VM) [OBSOLETE] EBSCO eBook Subscription Academic Collection - Worldwide
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicon
General subdivision Structure.
9 (RLIN) 1218614
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors
General subdivision Impurity distribution.
9 (RLIN) 1218615
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors
General subdivision Materials.
9 (RLIN) 288696
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicium
General subdivision Structure.
9 (RLIN) 1218616
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semi-conducteurs
General subdivision Diffusion des impuretés.
9 (RLIN) 1218617
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semi-conducteurs
General subdivision Matériaux.
9 (RLIN) 909770
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Condensed matter physics (liquid state & solid state physics)
Source of heading or term bicssc
9 (RLIN) 1218618
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Materials science.
Source of heading or term bicssc
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Mathematical modelling.
Source of heading or term bicssc
9 (RLIN) 1093021
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING
General subdivision Mechanical.
Source of heading or term bisacsh
9 (RLIN) 91801
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors
General subdivision Impurity distribution.
Source of heading or term fast
-- (OCoLC)fst01112226
9 (RLIN) 1218615
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors
General subdivision Materials.
Source of heading or term fast
-- (OCoLC)fst01112237
9 (RLIN) 288696
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Talanin, I. E.
Fuller form of name (Igor Evgenievich),
Relator term author.
9 (RLIN) 1218619
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Print version:
Main entry heading Talanin, V.I. (Vitaliĭ Igorʹevich).
Title Formation of structural imperfections in semiconductor silicon.
Place, publisher, and date of publication Newcastle upon Tyne, UK : Cambridge Scholars Publishing, 2018
International Standard Book Number 1527506355
Record control number (OCoLC)1019739852
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1986604">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1986604</a>
938 ## -
-- Askews and Holts Library Services
-- ASKH
-- AH35778007
938 ## -
-- ProQuest Ebook Central
-- EBLB
-- EBL5621998
938 ## -
-- EBSCOhost
-- EBSC
-- 1986604
938 ## -
-- eLibro
-- ELBO
-- ELB120272
938 ## -
-- YBP Library Services
-- YANK
-- 15900544
994 ## -
-- 92
-- INOPJ
Holdings
Withdrawn status Lost status Damaged status Not for loan Collection code Home library Current library Date acquired Total Checkouts Date last seen Price effective from Koha item type
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