Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 /

Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / editor, A.N. Christensen [and others]. - Singapore ; Teaneck, NJ : World Scientific, 1988. - 1 online resource (xi, 541 pages)

Includes bibliographical references.

Fundamentals and techniques. Fundamental aspects of crystal growth from the melt / C. Paorici & L. Zanotti -- Phase diagrams / A.N. Christensen -- Phase diagrams in crystal growth / A.N. Christensen -- Growth procedures and perfection of semiconductor materials / A. Lindegaard-Andersen -- Floating zone crystal growth / A.N. Christensen -- Cold crucible and skull melting growth methods / A.N. Christensen -- Atomistic aspects of crystal growth and epitaxy / I. Markov -- Fundamental aspects and vapour phase epitaxial techniques of ternary compounds and its alloys / F. Leccabue & C. Pelosi -- Fundamentals of liquid-phase epitaxial growth / P. Kordos -- Physics and technology of microstructures in solids: Motivation for molecular beam epitaxy / A. Zehe -- Art and routine of MBE-growth / A. Zehe -- Materials: Characterization and applications. Diffraction methods in materials science / Th. Hahn -- Characterization of semiconductor crystals and device materials by x-ray topography / A. Lindegaard-Andersen -- Equilibrium carrier density and solubility of group V dopants in silicon / D. Nobili -- Silicon-MBE and microelectronics / A. Zehe -- Determination of few selected basic parameter at the investigation of AIII-BV semiconductors using x-ray methods / H.-G. Bruhl -- Investigation of (Ga, In) (As, P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation / H.-G. Bruhl -- Characterization of Ga[symbols]/GaAs superlattices by x-ray diffraction / H.-G. Bruhl -- Physical aspects of very high photovoltaic concentration: Lesson 1 -- Physical foundations of solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 2 -- Efficiency limits in concentrating solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 3 -- Optical and thermal considerations of very high concentration cells / A. Luque -- Multijunction solar cells / I. Chambouleyron -- Variable band-gap amorphous semiconductors / I. Chambouleyron -- Application of the Mossbauer spectroscopy to the study of magnetic materials / G. Albanese -- Metallic magnetism in modern materials / D. Givord.

Use copy

This volume contains the the Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials that was held at La Habana University, Cuba, from 30 November to 10 December 1987. Lectures were delivered on various aspects of crystal growth, crystal characterization and material applications.


Electronic reproduction.
[Place of publication not identified] :
HathiTrust Digital Library,
2010.


Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
http://purl.oclc.org/DLF/benchrepro0212

9789814541589 (electronic bk.) 9814541583 (electronic bk.)


Crystal growth--Congresses.
Cristaux--Croissance--Congrès.
SCIENCE--Physics--Crystallography.
Crystal growth.


Electronic books.
Electronic books.
Conference papers and proceedings.

QD921 / .I536 1987

548.51988 CRY

O.P. Jindal Global University, Sonepat-Narela Road, Sonepat, Haryana (India) - 131001

Send your feedback to glus@jgu.edu.in

Hosted, Implemented & Customized by: BestBookBuddies   |   Maintained by: Global Library